metal oxide semiconductor structure

The influence of catalyzing metal thin films on MEMS ammonia-sensitive sensor with a MOS structure;

催化金属薄膜对MOS结构MEMS氨敏传感器性能的影响

For the sake of researching of radiation effect of MOS structure irradiated by electron,we adopted 0.

为了研究MOS结构的电子辐照效应,采取了能量为0。

In the article, the TiO_2 film grown on Si substrates by low pressure MOCVD method replace SiO_2 film in MOS structure.

采用低压MOCVD法在(111)取向硅基上制备了TiO2薄膜代替通常MOS结构的SiO2,并测量了TiO2薄膜的介电常数、表面固定电荷密度和电阻率,与SiO2作比较,结果表明:TiO2的MOS结构比SiO2具有更优良的性质,更适应于超大规模集成电路制造。

A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs.

提出了一种新的纯MOS结构的基准电压源,它利用pMOS和nMOS的阈值电压差来抵消工艺偏差,提高了基准的精度。

The radiation response and electric characteristics of 6H-SiC MOS structure are studied with experiment.

对SiC MOS结构辐照引起的电参数退化及其电特性进行了研究。

The distortion of the C-V characteristics of a SiC buried-channel MOS structure is presented.

隐埋沟道MOSFET中存在一个pn结,在沟道夹断以后,半导体表面耗尽区和pn结耗尽区连在一起,这时总的表面电容是半导体表面耗尽区电容和pn结电容的串联,使埋沟MOS结构的C-V特性发生畸变。