cmos inverter

Study of temperature properties of the SiC CMOS inverter;

碳化硅CMOS倒相器温度特性

In this paper,thinking of the existence of leakage current,we make out a simple analytical model of CMOS inverter s input and output feature in wide temperature range We find out the main factors that limit the high temperature performance of CMOS circuits Finally,this model is testified by the experiments result

在考虑了器件高温泄漏电流的前提下 ,建立了宽温区CMOS倒相器的传输特性模型 ,明确了制约CMOS电路高温性能的主要因素以及设计的关键之处 最后 ,用实验检验了该模型的合理

An improved analytical model is developed to predict the propagation delay of a small size CMOS inverter, which includes the effect of the velocity saturation and the influence of input waveform slope.

提出了一个新的小尺寸 CMOS倒相器延迟模型 ,它考虑了速度饱和效应以及非阶梯的输入信号对延迟的影响并给出了倒相器快输入响应与慢输入响应的判据 ,模型计算结果与SPICE BSIM1模型的模拟结果吻合得很好 。

A novel Schmitt-PPI circuit consisting of a Schmitt trigger and two push-pull inverter with an active resistor is presented.

该文提出了一种由施密特触发器和带有源负载推挽倒相器组成的新颖Schmitt PPI电路结构,可在CMOS脉冲电路中克服电源Gauss白噪声对电路的影响,避免误触发,得到较为稳定的脉冲。