FRAM (Ferromagnetic RAM )

Recently, rare-earth lanthanides doped Bi4Ti3Oi2 (BIT) with Bi-layered perovskite structure has been studied intensively for potential applications in ferroelectric random access memories (FeRAM) due to its relatively low crystallization temperature, good fatigue endurance and larger spontaneous polarization compared to SrBi2Ta2O9 (SBT)-based films.

近年来，稀有金属离子掺杂的钛酸铋(Bi_4Ti_3O_(12)，简写为BTO)铁电薄膜成为研究的热点，这种材料结晶温度较低、抗疲劳特性好、自发极化较大(相对SrBi_2Ta_2O_9薄膜来说)，所以可望成为新的铁电随机存储器(FRAM)专用材料。

An analytical expression of the current induced magnetic field in magnetic random access memory (MRAM) has been presented in this paper.

根据磁性随机存储器(MRAM)设计的实际需要,建立了MRAM中相互垂直的字线和位线电流所产生的磁场的解析分布模型。

This paper introduced the giant magnetoresistance materials and their applications to magnetoresistance sensors,read head for high density magnetic recording and magnetic random access memory.

介绍了巨磁电阻材料在高密度读出磁头、磁传感器、磁性随机存储器等领域的应用。

Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM;

磁随机存储器中垂直电流驱动的磁性隧道结自由层的磁化翻转

The Research of MRAM Storage;

磁阻式随机存取存储器研究