surface ion density

Measuring the ion density of pulsed vacuum arc source;

脉冲真空放电离子密度的测量

Aim To investigate the influence of ion density( n i) on the deposition of wurtzite GaN films on the substrate of α Al 2O 3(0001) by electron cyclotron resonance plasma.

目的　研究在电子回旋共振等离子体辅助法生长ＧａＮ 时的离子密度对其质量的影响。

The ion density, flux, dose distributions are calculated by solving Poisson s equation and the equations of ion motion and continuity us.

通过计算得到了鞘层内随时间变化的电势分布和离子密度分布 ,计算了端点附近材料表面处的离子流密度分布和注入剂量分布随时间的变化规律 。

Acting as the “surface ions”, the complexes, especially Gd(tmhd) 3, interacted with AA molecules due to the strong complexation.

以铈、钆的 β 二酮螯合物Ce(tmhd) 4 和Gd(tmhd) 3 (tmhd =tetramethylheptanedionate)为表面离子 ,与花生酸 (AA)在水面上共铺展 ,可形成具有良好相容性、稳定性和可压缩性的混合Langmuir膜 ,这是由于稀土螯合物与AA间发生了新的配合 ,而且Gd(tmhd) 3 与AA间的相互作用更强 。