burn-out resistance

Quantum calculations of tunneling resistance in single electron transistors;

单电子晶体管隧穿电阻的量子计算

The MTJs with tunneling magnetoresistance (TMR) ratio of 30%—48% can be directly obtained for the structure of Ta(5 nm)/Cu(25 nm)/Ni_ 79Fe_ 21(.

采用4nm厚的Co75Fe25为铁磁电极和1·0或0·8nm厚的铝氧化物为势垒膜,直接制备出了室温隧穿磁电阻(TMR)为30%—48%的磁性隧道结,其结构为Ta(5nm)/Cu(25nm)/Ni79Fe21(5nm)/Ir22Mn78(10nm)/Co75Fe25(4nm)/Al(0·8nm)-O/Co75Fe25(4nm)/Ni79Fe21(20nm)/Ta(5nm)。

The typical values of junction resistance_area product and tunneling magnetoresistance (TMR) ratio of the MTJs are 16 kΩμm 2 and 18% respectively.

利用现有的光刻设备和工艺条件在 4英寸热氧化硅衬底上直接制备出的磁性隧道结 ,其结电阻与面积的积矢的绝对误差在 10 %以内 ,隧穿磁电阻的绝对误差在 7%以内 ,样品的磁性隧道结性质具有较好的均匀性和一致性 ,可以满足研制磁随机存储器存储单元演示器件的基本要

For example, the MTJs of Co/Al 2O 3/Co with a tunneling magnetoresistance (TMR) ratio of 17 2%, the junction resistance of .

例如 :利用狭缝宽度为 1 0 0 μm的金属掩模 ,直接制备出室温隧穿磁电阻比值为 1 7 2 %的磁性隧道结Co Al2 O3 Co,其结电阻为 76Ω ,结电阻和结面积的积矢为 76× 1 0 4 Ωμm2 ,自由层的偏转场为 1 1 1 4A m ,并且在外加磁场 0— 1 1 1 4A·m- 1 之间时室温磁电阻比值从零跳跃增加到 1 7 2 % ,磁场灵敏度达到 0 1 % (1 0 3A·m- 1 ) 。

Tunnelling magnetoresistance effects of magnetic tunnel junctions

磁性隧道结的隧穿磁电阻效应及其研究进展

Study of Tunneling Magnetoresistance in Organic Spintronic

有机自旋电子学中的隧穿磁电阻研究

Study on Tunneling Magnetic Resistance of the Ferromagnetic/Organic Polymer/Ferromagnetic Sandwich Structure

铁磁体/有机体/铁磁体三明治结构的隧穿磁电阻

The Theoretical Research about the Tunneling Magnetoresistance in Double Spin Filter Tunnel Junctions;

双自旋过滤隧道结中的隧穿磁电阻的理论研究

Study on Polarization and Tunneling Magnetoresistance about Double Tunnel Junctions

双隧道结中极化率和隧穿磁电阻的研究

Spin-Polarized Transport and TMR Effect in Mesoscopic System;

介观体系中的电子自旋输运及隧穿磁阻效应

Research on the Magnetoresistance and Switching Behavior of the Ferromagnetic Tunnel Juctions;

铁磁隧道结磁电阻及转换特性的研究

Study of tunneling magnetoresistance of ferromagnet/organic/insulator/ferromagnet magnetic tunneling junction

铁磁/有机/绝缘/铁磁多层膜的隧道磁电阻研究

Charged particle tunneling in a static dilaton black hole

静态dilaton黑洞中带电磁荷粒子的隧穿效应

The tunneling current is obstructed when the two ferromagnetic layers have opposite orientations and is allowed when their orientations are the same.

若两侧的铁磁层磁性方向相反，穿隧电流就被挡住，反之则可通过。

Applying the opposite voltage bias to widen the tunneling gap and raise the electrical resistance would reopen the switch.

施加反向电压以增大穿隧间隙，提高电阻，可以重新将开关断开。

Study of NEMS Accelerometer Based on Meso-piezoresistive Effect of Resonant Tunneling Structure;

基于共振隧穿结构介观压阻效应的纳机电加速度计研究

Comparison and Analysis on Measurement Method of Resonant Tunneling Diode Series Resistance

共振隧穿二极管串联电阻测量方法的比较与分析

Resonance and Tunneling of the Pairing Conjugate Structure Permittivity and Negative Permeability Materials;

负介电常数材料与负磁导率材料双层共轭结构的共振隧穿

Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode

GaMnN铁磁共振隧穿二极管自旋电流输运以及极化效应的影响

Influence of High-Pressure and High-Temperature on Tunneling Magnetoresistance Effect of CrO_2 Nanometer Structure;

高温高压对二氧化铬纳米结构隧道磁电阻效应的影响

Research about Tunneling Time in the Ferromagnet/insulator/ferromagnet Magnetic Junction

铁磁体/绝缘体/铁磁体磁性隧道结中的隧穿时间研究

Study of GaAs-Based Resonant Tunneling Piezoresistor Accelerometer;

GaAs基共振隧穿压阻式加速度计研究